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| HAFNIUM TERT-BUTOXIDE Basic information |
| HAFNIUM TERT-BUTOXIDE Chemical Properties |
| Melting point | 2℃ | | Boiling point | 90 °C5 mm Hg(lit.) | | density | 1.166 g/mL at 25 °C(lit.) | | refractive index | n20/D 1.424(lit.) | | Fp | 83 °F | | solubility | Soluble in hydrocarbons, reacts with alcohols, ketones, and esters | | form | Liquid | | Specific Gravity | 1.166 | | Hydrolytic Sensitivity | 7: reacts slowly with moisture/water | | Sensitive | Moisture Sensitive/Light Sensitive | | Exposure limits | ACGIH: TWA 0.5 mg/m3NIOSH: IDLH 50 mg/m3; TWA 0.5 mg/m3 | | CAS DataBase Reference | 2172-02-3(CAS DataBase Reference) |
| Hazard Codes | Xi | | Risk Statements | 10-36/37/38 | | Safety Statements | 16-26 | | RIDADR | UN 1993 3/PG 3 | | WGK Germany | 3 | | TSCA | No | | HazardClass | 3 | | PackingGroup | II | | HS Code | 2905190019 |
| HAFNIUM TERT-BUTOXIDE Usage And Synthesis |
| Uses | Hafnium tert-butoxide [Hf(OtBu)4] is a mononuclear; volatile; and highly promising precursor for the deposition of HfO2 and other hafnium doped thin films by vapor deposition techniques. The deposited films show high dielectric constant suitable for semiconductor devices. | | General Description | Atomic number of base material: 72 Hafnium |
| HAFNIUM TERT-BUTOXIDE Preparation Products And Raw materials |
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