TRIS(DIMETHYLAMINO)SILANE
TRIS(DIMETHYLAMINO)SILANE
  • CAS No.:15112-89-7
Other grades of this product :
TRIS(DIMETHYLAMINO)SILANE Basic information
Product Name:TRIS(DIMETHYLAMINO)SILANE
Synonyms:TRIS(DIMETHYLAMINO)SILANE;n,n,n’,n’,n’’,n’’-hexamethyl-silanetriamin;n,n,n’,n’,n’’,n’’-hexamethylsilanetriamine;N,N,N’,N’,N’’,N’’-hexamethyl-Silanetriamine;TRIS(DIMETHYLAMINO)SILANE 99+%;N,N',N''-(Silanetriyl)tris(dimethylamine);N,N',N''-Silanetriyltris(dimethylamine);TRIS(DIMETHYLAMINO)SILANE, 99.9+%
CAS:15112-89-7
MF:C6H19N3Si
MW:161.32
EINECS:239-165-0
Product Categories:ALD Precursors;organosilicon compounds
Mol File:15112-89-7.mol
TRIS(DIMETHYLAMINO)SILANE Chemical Properties
Melting point <0°C
Boiling point 145 °C
density 0,838 g/cm3
refractive index 1.4247
Fp 25°C
form liquid
pka10.93±0.70(Predicted)
color colorless to light yellow
Specific Gravity0.84
Hydrolytic Sensitivity8: reacts rapidly with moisture, water, protic solvents
Sensitive air sensitive, moisture sensitive
EPA Substance Registry SystemN,N,N',N',N'',N''-Hexamethylsilanetriamine (15112-89-7)
Safety Information
Hazard Codes F,C
Risk Statements 10-36/37/38-52/53-34-29-20-15-11
Safety Statements 16-26-36/37/39-45-43
RIDADR 1993
WGK Germany 3
RTECS VV5800000
TSCA Yes
MSDS Information
TRIS(DIMETHYLAMINO)SILANE Usage And Synthesis
UsesTris(dimethylamino)silane (TDMAS) is used as an organosilicon source for the deposition of Si oxynitride; carbonitride; nitride and oxide thin films. It is also used to form multicomponent silicon containing thin films. The depositions can be carried out at low substrate temperatures (<150). The melting point and vapor pressure of TDMAS is in a suitable working range; thus making it a very good vapor deposition precursor.
General DescriptionPlease inquire for quantity, pricing, and packaging options.
TRIS(DIMETHYLAMINO)SILANE Preparation Products And Raw materials

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