Benzo[1,2-b:4,5-b']dithiophene-4,8-dione
Benzo[1,2-b:4,5-b']dithiophene-4,8-dione
  • CAS No.:32281-36-0
Other grades of this product :
Benzo[1,2-b:4,5-b']dithiophene-4,8-dione Basic information
Product Name:Benzo[1,2-b:4,5-b']dithiophene-4,8-dione
Synonyms:Benzo[1,2-b:4,5-b']dithiophene-4,8-dione;4,8-Dihydrobenzo[1,2-b:4,5-b']dithiophen-4,8-dione;8-Dihydrobenzo[1,2-b:4,5-b']dithiophen-4,8-dione;NSC 149690;benzo[1,2-b:4,5-b']bisthiophene-4,8-dione;4,8‐Dihydrobenzo[1,2‐ b:4,5‐b']dithiophen‐ 4,8‐dion;Benzo[1,2-b:4,5-b']dithiophene-4,8-dione 97%;2-b:4
CAS:32281-36-0
MF:C10H4O2S2
MW:220.27
EINECS:605-241-0
Product Categories:
Mol File:32281-36-0.mol
Benzo[1,2-b:4,5-b']dithiophene-4,8-dione Chemical Properties
Melting point 260-262℃
Boiling point 408.0±35.0 °C(Predicted)
density 1.595
storage temp. Keep in dark place,Sealed in dry,Room Temperature
form powder to crystal
color White to Amber to Dark green
InChIKeySIUXRPJYVQQBAF-UHFFFAOYSA-N
OdorYellow powder
Safety Information
Safety Statements 24/25
WGK Germany 3
HS Code 29349990
MSDS Information
Benzo[1,2-b:4,5-b']dithiophene-4,8-dione Usage And Synthesis
DescriptionBenzo[1,2-b:4,5-b’]dithiophene is a planar symmetrical molecular structure of the thiophene derivative, enabling a better π-π?stacking and good electron delocalization that encourages charge transport. In recent years, it has been intensively studied for the application of OFETs and OPVs. The incorporation of a low-band-gap unit into the benzo[1,2-b:4,5-b’]dithiophene unit could potentially result in a red-shifted absorption due to its electron-rich properties. Benzo[1,2-b:4,5-b’]dithiophene can be chemically modified to fine-tune its chemical structure and electron properties (e.g. band gap), energy levels, and charge mobility of the small molecule/polymers of interest (at a molecular level).
UsesBDTD can be used as an acceptor layer in the fabrication of polymer based solar cells.
Usessuzuki reaction
General DescriptionBenzo[1,2-b:4,5-b′]dithiophene-4,8-dione (BDTD) is a conductive polymer with a symmetric and planar conjugated structure which has a hole mobility of 0.25 cm2V-1s-1.

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