Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine)
Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine)
  • CAS No.:220797-16-0
Other grades of this product :
Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) Basic information
Classification Applications
Product Name:Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine)
Synonyms:Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine);TFB AldrichCPR;s-TFB,Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4’-(N-(4-sec-butyl- phenyl)diphenylamine);P-200 Poly(9,9-dioctylfluorene-co-N-(4-(1-methylpropyl) phenyl)diphenylamine);Polyimino]-1,4-phenylene(9,9-dioctyl-9H-fluorene-2,7-diyl)-1,4-phenylene]
CAS:220797-16-0
MF:C51H63N
MW:690.05262
EINECS:
Product Categories:
Mol File:220797-16-0.mol
Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) Chemical Properties
Melting point 166.2℃
form powder
color yellow
SolventTHF, Toluene and Chloroform
Absorptionλmax?390 nm (in THF)
Safety Information
MSDS Information
Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) Usage And Synthesis
ClassificationHole transport material (HTL), Hole injection material (HIL), Electron blocking material (EBL), OLEDs, Perovskite solar cells, Organic and printed electronics.
ApplicationsPoly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB) is a triarylamine based semiconductor with a band gap of 3 eV (HOMO and LUMO levels of 5.3 and 2.3 eV, respectively) and a relatively high hole mobility of 2 ×10-3 cm2 V-1 s-1. Due to its low ionisation potential and high hole mobility, TFB serves primarily as hole transport layer (HTL), hole-injection layer (HIL) and electron-blocking layer (EBL) material in organic electronic devices. When built into device as an interface material, TFB as an electron blocking layer will not only reduce the chance of electron leakage, but also reduce the possibility of exciton quenching between the interface of the active layer and charge transport layer (F8BT/MoOx for example).
DescriptionPoly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB) is a triarylamine based semiconductor with a band gap of 3 eV (HOMO and LUMO levels of 5.3 and 2.3 eV, respectively) and a relatively high hole mobility of 2 ×10-3 cm2 V-1 s-1.
UsesTFB can be used in the formation of multilayer quantum dot-based light-emitting diodes (LEDs). It can also be used in the fabrication of highly responsive gas sensors for breath analysis.
UsesTFB can be used for a variety of optoelectronic applications such as organic light emitting diodes (OLEDs), quantum dot displays (QDs) and solar cells.
General DescriptionTFB, a hole transporting material and an electron-blocking layer, has high hole mobility, low electron affinity, and high ionic potential. Its electron blocking nature results in effective confinement of injected charge carriers in the perovskite layers.
Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) Preparation Products And Raw materials

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